This work demon-strates an effective way to manipulate the quantum transport properties of the topological insulators by breaking time-reversal symmetry. By eective tuning the Fermi level via gate-voltage control, we unveil a striking competition between weak localization and weak antilocalization at low magnetic elds Yoshio Kuramoto. Weak anti-localization (WAL) effect in BST crystal. Phys Rev B, 2009. Topological crystalline insulators (TCIs) are a subclass of topological materials that possess conducting surface and edge states due to band inversion at locations of high crystal symmetry in the Brillouin zone. weizhe.liu@unsw.edu.au. weak anti-localization effects. Scientific . Abstract: Localization properties of the doped Z_2-topological insulator are studied by weak localization theory.

He proposed topological Anderson insulator, theory of weak-localization and anti-localization in topological insulators, resonant spin Hall effect and theory of phase separation in colossal magnetoresistive (CMR) materials. Weak localization and Weak anti-localization Hikami, Larkin, and Nagaoka Prog. Weakanti-localization(WAL)effectinBSTcrystal.Asaquantum correction to classical magnetoresistance, the WAL effect is a signature of topological surface states originating from the Berry's phase which is associated with the helical states13,15,46. Details of crystal growth and various physical properties including high linear magneto resistance are already reported by some of us. Topological insulators, a new quantum state of matter, create exciting opportunities for studying topological quantum physics and for exploring spintronic applications due to their gapless helical metallic surface states. . hree-dimensional (3d) topological insulators (tis) are distinct materials featuring bulk insulting states and unique massless dirac fermions in the surface state.13in particular, the spins of electrons in these states are tightly locked to their momentums due to the strong spinorbit coupling, and thus backscattering in the dirac fermions by In contrast, for gapless surface states, a Berry phase always leads to weak anti-localization and an associated negative mag- This work demonstrates an effective way to manipulate the quantum . (a) The change of sheet magnetoconductance plotted in the perpendicular magnetic field component of the magnetic field, Bsin, at 1.9 K. The only. Using this experience, in a joint theory-experiment effort [2], we have recently been able to extract phase diagrams of topological insulator heterostructures by carefully analyzing their weak anti-localization data. The measured weak anti-localization effect agrees well with the Hikami-Larkin-Nagaoka model and the extracted phase . 1 Surface states induced weak anti-localization effect in Bi 0.85 Sb 0.15 topological single crystal Yogesh Kumar1,2 and V.P.S. Topological crystalline insulators (TCIs) have attracted worldwide interest since their theoretical predication and have created exciting opportunities for studying topological quantum physics and for exploring spintronic applications. The weak anti-localization effect was dominated by a single two-dimensional channel over two decades of thickness.

Lu and S. Q. Shen, " Weak localization and weak anti-localization in topological insulators," Proc. In this work, we report the weak anti-localization (WAL) effect and Shubnikov-de Haas (SdH) oscillations originated from the surface states of PbTe nanowires.

Further, the transport properties are investigated, which shows thickness dependence of weak anti-localization effect (WAL) in the system and proposed these Bi2Se3/SiO2 thin films as a topological Anderson insulator (TAI). We study magneto-transport . Topological materials such as topological insulators, topological semimetals, etc. Authors: Garate, Ion; Glazman, Leonid Publication Date: 2012-07-01 NSF-PAR ID: 10004419 Journal Name: Physical Review B Volume: 86 Issue: 3 ISSN: 1098-0121 Publisher: American Physical Society In contrast, our analysis reveals that topological insulators always exhibit weak antilocalization. In this work, we discuss weak localization and antilocalization of massless Dirac fermions in topological insulators and massive Dirac fermions . Impurity effect on weak anti-localization in topological insulator Bi2Te3 . Different from conventional topological insulators (TIs), protection of the surface states comes from point-group symmetry instead of time-reversal symmetry in TIs. Weak anti-localization enhances the conductivity and weak localization suppresses the conductivity with decreasing temperature at very low temperatures. To elaborate upon the transport properties of Bi2Te3 crystal, the magneto conductivity is fitted to the known HLN . This ends up being the result of the Shubnikov-de Haas Effect. The magneto transport data reveals weak anti-localization and electron-electron interaction driven insulating ground state with n-type character. [1 . Topological Insulators. . Topological Insulators in 3D - Weak vs strong - Topological invariants from band structure IV. Topological insulators, a new quantum state of matter, create exciting opportunities for studying topological quantum physics and for exploring spintronic applications due to their gapless helical metallic surface states. CITED BY Abstract Weak localization and weak anti-localization are quantum interference effects in quantum transport in a disor- dered electron system. 1,2 1. Awana1,2* 1CSIR -National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012, India 2Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India Abstract We report, an experimental evidence of surface states (SS) driven magneto-transport in Topological insulators, a new quantum state of matter, create exciting opportunities for .

6.1.2 Weak anti-localization in topological insulator thin films in multichannel limit- Weak anti-localization enhances the conductivity and weak localization suppresses the conductivity with decreasing temperature at very low temperatures. . This work demonstrates an effective way to manipulate the magneto-transport properties of the topological insulators by rare-earth element doping. 2.3 Weak anti-localization in topological insulators Since the studies of the carbon nanotube and graphene, it has been known that a two-dimensional gapless Dirac cone could have the weak anti-localization.13,14 The surface states of a three-dimensional topological insulator are also two-dimensional gapless Dirac fermions. This work demon-strates an effective way to manipulate the quantum transport properties of the topological insulators by breaking time-reversal symmetry. proximity to a ferromagnetic insulator16-18. The transition from weak localization to weak anti-localization demonstrates a gap opening at the Dirac point of the surface states in the quantum diffusive regime. Comments: 15 Pages Text + Figs: Accepted JMSE: Subjects: One of the signatures of the gap openings is the weak localization effect19. PDF - Topological insulators, a new quantum state of matter, create exciting opportunities for studying topological quantum physics and for exploring spintronic applications due to their gapless helical metallic surface states. .1 Introduction The discovery of topological insulators(TIs) is one of the recent . Au thin films, Here we present the magneto-transport properties of our high quality single crystalline Y(Lu)PtBi Heusler topological insulators, which belong to a group of noncentrosymmetric superconductor with . Weak localization and weak anti-localization in topological insulators Lu, Hai-Zhou; Shen, Shun-Qing Proceedings of SPIE, Volume 9167 - Aug 28, 2014 Read Article Download PDF Share Full Text for Free (beta) 11 pages Article Details Recommended References Bookmark Add to Folder Cite Social Times Cited: Web of Science Journals / Proceedings of SPIE / The measured weak anti-localization effect agrees well with the Hikami-Larkin-Nagaoka model and the extracted phase . Additionally, we have carried outmagneto-transport measurements on single crystal akes as well as thin lms of BiSe, whichexhibit clear signatures of weak anti-localization at low temperatures, consistent with the prop-erties of topological insulators. By effective tuning the Fermi level via gate-voltage control, we unveil a striking competition between weak localization and weak antilocalization at low magnetic fields in . Quantum transport in topological insulators: Weak Anti-localization & Electron-electron interaction Hai-Zhou Lu () Department of Physics The University of Hong Kong. Topological crystalline insulators (TCIs) have attracted worldwide interest since their theoretical predication and have created exciting opportunities for studying topological quantum physics and for exploring spintronic applications. DOI: 10.1103/PHYSREVB.86.075102 Corpus ID: 124821444; Weak localization bulk state in a topological insulator Bi2Te3film @article{Zhang2012WeakLB, title={Weak localization bulk state in a topological insulator Bi2Te3film}, author={H. B. Zhang and H. L. Yu and Dinghua Bao and Shunbo Li and C. X. Wang and Guang Yang}, journal={Physical Review B}, year={2012}, volume={86} } Weak anti-localization enhances the conductivity and weak localization suppresses the conductivity with decreasing temperature at very low temperatures. Symmetry classes of random ensembles [F. J. Dyson, J. Weak anti-localization enhances the conductivity and weak localization suppresses the conductivity with decreasing temperature at very low temperatures. In topological insulators (TIs), a finite band gap in the bulk is accompanied by metallic surface states with linear dispersion, resulting from band inversion 1,2.These surface states have a . (a) . . 1 School of Physics and Australian Research Council Centre of Excellence in Low-Energy ElectronicsTechnologies, UNSW Node, The University of New South Wales, Sydney 2052, Australia. Additionally, time-reversal symmetry can be . We show that a number of transport properties in topological insulator (TI) Bi2Se3 exhibit striking thickness-dependences over a range of up to five orders of thickness (3 nm - 170 mu m). Topological insulators are new kind of Dirac materials that possess bulk insulating and surface conducting behavior. sample, and the complex crossover is due to the transformation of Bi2Se3 from a topological insulator to a topologically trivial dilute magnetic semiconductor driven by magnetic impurities. Angle-resolved photoemission . Fig1 SmB6 weak anti localization. This work demonstrates an effective way to manipulate the magneto-transport properties of the topological insulators by rare-earth element doping. Here, we report the observation of weak anti-localization and quantum oscillations originated from surface states in Bi2Se2Te crystals. We found that at high fields, the magnetoresistance of many samples would oscillate slightly. The data are consistent with expectations of the different topological states of these films. We will discuss the important role of bulk The surface of a three-dimensional (3D) topological insulator is conducting and the topologically nontrivial nature of the Topological materials have attracted considerable experimental and theoretical attention. Localization properties of the doped Z_2-topological insulator are studied by weak localization theory. . The major obstacle to achieve accurate results is how to eliminate the contribution of the anisotropic magnetoconductance of bulk states when the Fermi level lies in bulk bands. We study the weak antilocalization (WAL) effect in topological insulator ${\mathrm{Bi}}_{2}{\mathrm{Te}}_{3}$ thin films at low temperatures. They are basically known for their unique electronic properties of their surface. Weak antilocalization - - B (T) Magnetoconductivity due to Weak Anti-localization =1/2 for Au film One surface of TI Traditional 2D systems with strong SOC Hoffmann, PRB (1982) e.g. The disordered Kane-Mele model for graphene is taken as a prototype, and analyzed with attention to effects of the topological mass term, inter-valley scattering, and the Rashba spin-orbit interaction. Recently the theory of topological Kondo insulator has predicted in some of these materials the existence of a topological nontrivial surface state. We demonstrate evidence of a surface gap opening in topological insulator (TI) thin films of (Bi 0.57 Sb 0.43) 2 Te 3 below six quintuple layers through transport and scanning tunneling spectroscopy measurements. We present a magnetotransport study of the Dirac electrons of this compound in the quantum diffusion regime. Weak localization and weak anti-localization are quantum interference effects in quantum transport in a disordered electron system. in topological insulator (TI) thin lms of (Bi 0.57 Sb 0.43) 2 Te 3 below six quintuple layers through transport and scanning tunneling spectroscopy measurements. A gap opened for the surface states by breaking time reversal symmetry in topological insulators is anticipated to host many novel physics 1,2,3,4,5,6,7,8.Experimentally, the gap may be realized either by magnetic doping 9,10,11,12,13,14,15, or by magnetic proximity to a ferromagnetic insulator 16,17,18.One of the signatures of the gap openings is the weak localization effect 19. They exhibit strong spin-orbit coupling both in the band structure (intrinsic) and in the impurity potentials (extrinsic), although the latter is often neglected. have sparked worldwide interest owing to their novel physical properties and potential applications in the field of spintronics 1 . Weak localization and weak anti-localization are quantum interference effects in quantum transport in a disor- dered electron system. The disordered Kane-Mele model for graphene is taken as a prototype, and analyzed with attention to effects of the topological mass term, . A magnetic field can destroy the quantum interference effect, giving rise to a cusp-like positive and negative magnetoconductivity as the signatures of weak . Low-Field Weak Anti-Localization also manifested itself in nearly every trial we did.